Ga/sub 0.47/In/sub 0.53/As enhancement- and depletion-mode MISFETs with very high transconductance

Authors :: J. Splettstoser
H. Beneking
Source :: IEEE Transactions on Electron Devices. 36:763-764
Publication Year :: 1989
Publisher :: Institute of Electrical and Electronics Engineers (IEEE), 1989.
Abstract: GaInAs metal-insulator-semiconductor field-effect transistors (MISFETs) have been fabricated on metalorganic vapor-phase-epitaxy (MOVPE) grown GaInAs layers. Enhancement-type MISFETs exhibit very high transconductances of 300 and 250 mS/mm for gate lengths of 1.5 and 3 mu m, respectively. The effective channel mobility is 5800 cm/sup 2/ V/sup -1/ s/sup -1/. The saturation velocity is 3.5*10/sup 7/ cm/s. High-frequency measurements performed on 3- and 1.5- mu m-gate-lengthdevices result in a current gain cutoff frequency of 6 and 14 GHz, respectively. >

Subjects :: Electron mobility
Materials science
business.industry
Transconductance
Transistor
Saturation velocity
Cutoff frequency
Electronic, Optical and Magnetic Materials
Gallium arsenide
law.invention
chemistry.chemical_compound
chemistry
law
Optoelectronics
Field-effect transistor
Metalorganic vapour phase epitaxy
Electrical and Electronic Engineering
business

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