37‐3: Late‐News Paper: Achieving High Field‐Effect Mobility Exceeding 60 cm 2 /Vs in IZTO Transistor via Metal‐Assisted Crystallization

Subjects

Subjects :

Materials science
business.industry
Transistor
law.invention
Metal
Oxide semiconductor
Thin-film transistor
law
visual_art
visual_art.visual_art_medium
Optoelectronics
High field
Crystallization
business

Details

ISSN :

21680159 and 0097966X

Volume :

50

Database :

OpenAIRE

Journal :

SID Symposium Digest of Technical Papers

Accession number :

edsair.doi...........5a18188361cc148fec264c421abc5f57

Full Text :

https://doi.org/10.1002/sdtp.12971