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Influence of H2O and O2 on threshold voltage shift in organic thin-film transistors: Deprotonation of SiOH on SiO2 gate-insulator surface

Authors :
Shizuo Tokito
Daisuke Kumaki
Tokiyoshi Umeda
Source :
Applied Physics Letters. 92:093309
Publication Year :
2008
Publisher :
AIP Publishing, 2008.

Abstract

The influence of H2O and O2 on the transistor characteristics in p- and n-type organic thin-film transistors (OTFTs) fabricated on the SiO2 gate insulator was investigated. In both p- and n-type OTFTs, the threshold voltage (Vth) shifted drastically to positive direction after exposure to ambient air and dry air, although the field-effect mobilities in saturation regime were almost unchanged before and after the Vth shift. The Vth shifts to the positive direction indicate that negative charges are generated on the SiO2 gate-insulator surface by exposure to ambient air and dry air. The influence of SiO− on the gate-insulator surface and deprotonation processes of SiOH caused by H2O and O2 were discussed as the origin of the significantly positive Vth shift.

Details

ISSN :
10773118 and 00036951
Volume :
92
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........59e609f13c3e01a21a7851dda8055946
Full Text :
https://doi.org/10.1063/1.2890853