Growth of epitaxial Y2O3-doped ferroelectric HfO2 films by sputtering method and their characterization

Authors :: H. Uchida
T. Suzkuki
H. Funakubo
T. Mimura
T. Shimizu
Source :: Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Publication Year :: 2018
Publisher :: The Japan Society of Applied Physics, 2018.

Subjects :: Materials science
business.industry
Sputtering
Doping
Optoelectronics
Epitaxy
business
Ferroelectricity
Characterization (materials science)

Database :: OpenAIRE
Journal :: Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials
Accession number :: edsair.doi...........59e114d3fab94c676ce5e2487f94634d

Tools