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New investigation of electronic properties of BGaAs/GaAs single quantum well for photonic applications
- Source :
- Optik. 205:164253
- Publication Year :
- 2020
- Publisher :
- Elsevier BV, 2020.
-
Abstract
- Electronic transition in BGaAs/GaAs single quantum well (SQW) have been performed combining the dimensional Schrodinger equation, band anticroissing BAC and 10-band k.p models. The modelling results have been validated experimentally by photoluminescence (PL), high resolution-X-ray diffraction (HRXRD) and photoreflectance (PR). The calculated results appeared to be consistent with experiments. Surface photovoltage SPV spectroscopy gives a new way to study the bandgap of the boron based-SQW for the first time. New e1-lh1 transition appeared which is specific to the SQW. The suggested structure looks to be a promising candidate for solar cells and photonic applications as well as a reference for the growth optimization and understanding of the electronic properties of related B(In)GaAs/GaAs quaternary alloys.
- Subjects :
- Diffraction
Photoluminescence
Materials science
business.industry
Band gap
Surface photovoltage
02 engineering and technology
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
01 natural sciences
Atomic and Molecular Physics, and Optics
Molecular electronic transition
Electronic, Optical and Magnetic Materials
010309 optics
Condensed Matter::Materials Science
0103 physical sciences
Optoelectronics
Electrical and Electronic Engineering
Photonics
0210 nano-technology
business
Spectroscopy
Quantum well
Subjects
Details
- ISSN :
- 00304026
- Volume :
- 205
- Database :
- OpenAIRE
- Journal :
- Optik
- Accession number :
- edsair.doi...........59cd4f8145c543c338d1da4d5b665036