Back to Search Start Over

Two-carrier transport-induced extremely large magnetoresistance in high mobility Sb2Se3

Authors :
Shiu-Ming Huang
Mitch M.C. Chou
Shih-Hsun Yu
Source :
Journal of Applied Physics. 121:015107
Publication Year :
2017
Publisher :
AIP Publishing, 2017.

Abstract

Large magnetoresistance (MR) has been widely reported in the A2B3 (A = Sb or Bi; B = Se or Te) family of topological insulators (TIs). Sb2Se3 is not a TI that was confirmed by the extracted zero Berry phase and the X-ray diffraction. An extremely large MR was observed in the Sb2Se3 crystals. This large MR increased quadratically with the magnetic field applied. The observed MR ratio was 830% at 10 K and 9 T, which was larger than that previously reported for all A2B3 family TIs. This large MR originated from two carriers with high mobility. The inversely square root of the MR ratio was proportional to the resistance.

Details

ISSN :
10897550 and 00218979
Volume :
121
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........59bf3821b5908818f2932c361c1aceb8
Full Text :
https://doi.org/10.1063/1.4973343