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Two-carrier transport-induced extremely large magnetoresistance in high mobility Sb2Se3
- Source :
- Journal of Applied Physics. 121:015107
- Publication Year :
- 2017
- Publisher :
- AIP Publishing, 2017.
-
Abstract
- Large magnetoresistance (MR) has been widely reported in the A2B3 (A = Sb or Bi; B = Se or Te) family of topological insulators (TIs). Sb2Se3 is not a TI that was confirmed by the extracted zero Berry phase and the X-ray diffraction. An extremely large MR was observed in the Sb2Se3 crystals. This large MR increased quadratically with the magnetic field applied. The observed MR ratio was 830% at 10 K and 9 T, which was larger than that previously reported for all A2B3 family TIs. This large MR originated from two carriers with high mobility. The inversely square root of the MR ratio was proportional to the resistance.
- Subjects :
- Diffraction
Materials science
Magnetoresistance
Condensed matter physics
General Physics and Astronomy
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Magnetic field
Nuclear magnetic resonance
Geometric phase
Topological insulator
0103 physical sciences
010306 general physics
0210 nano-technology
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 121
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........59bf3821b5908818f2932c361c1aceb8
- Full Text :
- https://doi.org/10.1063/1.4973343