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Axial silicon-germanium nanowire heterojunctions: Structural properties and carrier transport
- Source :
- Journal of Applied Physics. 125:205107
- Publication Year :
- 2019
- Publisher :
- AIP Publishing, 2019.
-
Abstract
- We analyzed structural and electrical properties of axial Si-Ge nanowire heterojunctions produced by the vapor-liquid-solid growth method using Au nanoclusters as catalysts. The observed nonlinear current-voltage characteristics, strong flicker noise, and damped current oscillations with frequencies of 20–30 MHz are explained using a proposed Si-Ge nanowire heterojunction energy band diagram that includes energy states associated with structural imperfections, as revealed by transmission electron microscopy.We analyzed structural and electrical properties of axial Si-Ge nanowire heterojunctions produced by the vapor-liquid-solid growth method using Au nanoclusters as catalysts. The observed nonlinear current-voltage characteristics, strong flicker noise, and damped current oscillations with frequencies of 20–30 MHz are explained using a proposed Si-Ge nanowire heterojunction energy band diagram that includes energy states associated with structural imperfections, as revealed by transmission electron microscopy.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Nanowire
General Physics and Astronomy
Heterojunction
02 engineering and technology
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
01 natural sciences
Nanoclusters
Silicon-germanium
Condensed Matter::Materials Science
chemistry.chemical_compound
chemistry
0103 physical sciences
Band diagram
Energy level
Optoelectronics
Flicker noise
0210 nano-technology
business
Electronic band structure
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 125
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........59b8b35fbdfbab7388041b159f23e5a9