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Characterization of geometry and depleting carrier dependence of active silicon waveguide in tailoring optical properties
Characterization of geometry and depleting carrier dependence of active silicon waveguide in tailoring optical properties
- Source :
- Photonics Research. 5:305
- Publication Year :
- 2017
- Publisher :
- The Optical Society, 2017.
-
Abstract
- Changes in refractive index and the corresponding changes in the characteristics of an optical waveguide in enabling propagation of light are the basis for many modern silicon photonic devices. Optical properties of these active nanoscale waveguides are sensitive to the little changes in geometry, external injection/biasing, and doping profiles, and can be crucial in design and manufacturing processes. This paper brings the active silicon waveguide for complete characterization of various distinctive guiding parameters, including perturbation in real and imaginary refractive index, mode loss, group velocity dispersion, and bending loss, which can be instrumental in developing optimal design specifications for various application-centric active silicon waveguides.
- Subjects :
- Materials science
Silicon photonics
Silicon
business.industry
Hybrid silicon laser
Physics::Optics
chemistry.chemical_element
Geometry
02 engineering and technology
Slow light
Waveguide (optics)
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Slot-waveguide
020210 optoelectronics & photonics
Optics
chemistry
0202 electrical engineering, electronic engineering, information engineering
Optoelectronics
Photonics
business
Refractive index
Subjects
Details
- ISSN :
- 23279125
- Volume :
- 5
- Database :
- OpenAIRE
- Journal :
- Photonics Research
- Accession number :
- edsair.doi...........5978c29caa744119955c68d8d25d0a19
- Full Text :
- https://doi.org/10.1364/prj.5.000305