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Characterization of geometry and depleting carrier dependence of active silicon waveguide in tailoring optical properties

Characterization of geometry and depleting carrier dependence of active silicon waveguide in tailoring optical properties

Authors :
Thas Nirmalathas
Stan Skafidas
Rezwanul Haque Khandokar
Asaduzzaman
Masuduzzaman Bakaul
Source :
Photonics Research. 5:305
Publication Year :
2017
Publisher :
The Optical Society, 2017.

Abstract

Changes in refractive index and the corresponding changes in the characteristics of an optical waveguide in enabling propagation of light are the basis for many modern silicon photonic devices. Optical properties of these active nanoscale waveguides are sensitive to the little changes in geometry, external injection/biasing, and doping profiles, and can be crucial in design and manufacturing processes. This paper brings the active silicon waveguide for complete characterization of various distinctive guiding parameters, including perturbation in real and imaginary refractive index, mode loss, group velocity dispersion, and bending loss, which can be instrumental in developing optimal design specifications for various application-centric active silicon waveguides.

Details

ISSN :
23279125
Volume :
5
Database :
OpenAIRE
Journal :
Photonics Research
Accession number :
edsair.doi...........5978c29caa744119955c68d8d25d0a19
Full Text :
https://doi.org/10.1364/prj.5.000305