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TiN/HfO/sub 2//TiN capacitor technology applicable to 70 nm generation DRAMs
- Source :
- 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).
- Publication Year :
- 2004
- Publisher :
- Japan Soc. Applied Phys, 2004.
-
Abstract
- We have developed a cylindrical TiN/HfO/sub 2//TiN (TIT) capacitor for 70 nm DRAMs application. TIT capacitors with HfO/sub 2/ films deposited by ALD(Atomic Layer Deposition) using Hf(NEtMe)/sub 4/ precursor and O/sub 2/ plasma as a reactant is shown to be applicable to DRAM device below 70 nm design rule for the first time. It shows the thermal budget endurance against back-end process of DRAM device as well as the very low enough Toxeq of about 13 /spl Aring/ to provide the sufficient cell capacitance.
Details
- Database :
- OpenAIRE
- Journal :
- 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407)
- Accession number :
- edsair.doi...........58ce84f1f2feb6adf54dbfb0de4b0ff4
- Full Text :
- https://doi.org/10.1109/vlsit.2003.1221092