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Circuit sensitivity analysis in terms of process parameters
- Source :
- Proceedings of International Electron Devices Meeting.
- Publication Year :
- 2002
- Publisher :
- IEEE, 2002.
-
Abstract
- A new methodology for sensitivity analysis at circuit level in terms of process parameters is presented. Response functions for long-channel MOSFETs are found from process and device simulations. Responses for a device with arbitrary dimensions are subsequently calculated using the MOS MODEL 9 scaling rules.
Details
- Database :
- OpenAIRE
- Journal :
- Proceedings of International Electron Devices Meeting
- Accession number :
- edsair.doi...........583c927d76dca72e62d244747f9e66c2
- Full Text :
- https://doi.org/10.1109/iedm.1995.499371