Realization and simulation of interdigitated back contact silicon solar cells with dopant-free asymmetric hetero-contacts

Crystalline silicon (c-Si) solar cells using interdigitated back contact (IBC) configurations are one of the most promising candidates to reach the practical efficiency limits of c-Si solar cells. However, the complexity of the process flow hinders the mass production of the IBC cells with conventional doped regions. One of the simple fabrication methods is to introduce the dopant-free carrier-selective contacts, which utilizes the fabrication processes with low temperature, e.g., the thermal evaporation or the spin coating. In this paper, we investigated efficiency close to 20% silicon IBC solar cells with dopant-free asymmetric hetero-contacts. In this solar cell configuration, the high work function material MoOx was chosen as the hole transporting layer, while the low work function material LiF was chosen as the electron transporting layer, respectively. The simulation results indicate that the perspective efficiency exceeding 22% for this type of cells is achievable with the optimized pitch width and improved passivation quality of the contacts, which has a great potential for the industrialization of IBC solar cells with simple fabrication processes.