SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV

MLA

L.F.Tz. Kwakman, et al. “SIMS Depth Profiling of Boron Ultra Shallow Junctions Using Oblique O2+ Beams down to 150eV.” Applied Surface Science, vol. 252, July 2006, pp. 7211–13. EBSCOhost, https://doi.org/10.1016/j.apsusc.2006.02.242.

APA

L.F.Tz. Kwakman, D. Delille, Marc Juhel, F. Laugier, M. Hopstaken, & C. Wyon. (2006). SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV. Applied Surface Science, 252, 7211–7213. https://doi.org/10.1016/j.apsusc.2006.02.242

Chicago

L.F.Tz. Kwakman, D. Delille, Marc Juhel, F. Laugier, M. Hopstaken, and C. Wyon. 2006. “SIMS Depth Profiling of Boron Ultra Shallow Junctions Using Oblique O2+ Beams down to 150eV.” Applied Surface Science 252 (July): 7211–13. doi:10.1016/j.apsusc.2006.02.242.