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Electron tunneling studies of ultrathin films near the superconductor-to-insulator transition
- Source :
- Physica B: Condensed Matter. 197:522-529
- Publication Year :
- 1994
- Publisher :
- Elsevier BV, 1994.
-
Abstract
- Electron tunneling measurements on ultrathin quench-condensed films near the superconductor-to-insulator (SI) transition reveal that the superconducting state degrades with increasing normal state sheet resistance, R□, in a manner that depends strongly on film morphology. In homogeneously disordered films, the superconducting energy gap Δo decreases continuously and appears to go to zero at the SI transition. In granular films the transport properties degrade while Δo remains constant. Measurements in the normal state reveal disorder enhanced e- -e- interaction corrections to the density of states. These effects are strong and depend on morphology in a manner that is consistent with their playing an important role in driving the SI transition.
- Subjects :
- Superconducting energy gap
Superconductivity
Materials science
Condensed matter physics
Condensed Matter::Superconductivity
Density of states
Insulator (electricity)
Electrical and Electronic Engineering
Normal state
Condensed Matter Physics
Sheet resistance
Quantum tunnelling
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 09214526
- Volume :
- 197
- Database :
- OpenAIRE
- Journal :
- Physica B: Condensed Matter
- Accession number :
- edsair.doi...........57fe5bd286ea8763cf8d0b6cc6eafdfc