Performance Analysis of Sigma Delta ADC Developed using Electrically Doped GAPSb/InP Gate All Around Tunnel Field Effect Transistor

Our focus is on the need for novel devices and the careful investigation of an electrically doped III–V ternary alloy-based gate-all-around tunnel field effect transistor (GAA-TFET) and its circuit applicability. We explored the role of band gap engineering in analyzing GAA-TFET using lattice-matched GaPSb and InP in the source region and channel/drain regions, respectively. This enhances DC and analog characteristics. The device features were then extracted using Silvaco and imported into a Cadence Virtuoso environment using the Verilog-A method to design a sigma delta ADC. The ADC output was then filtered and decimation using MATLAB, resulting into an 11-bit data converter with a 71.24-dB signal to-noise ratio.