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94 GHz transistor amplification using an HEMT

Authors :
Luke F. Lester
B.R. Lee
P.M. Smith
K.H.G. Duh
P.C. Chao
Source :
Electronics Letters. 22:780
Publication Year :
1986
Publisher :
Institution of Engineering and Technology (IET), 1986.

Abstract

Transistor amplification at 94 GHz has been demonstrated for the first time. A single-stage amplifier employing a high-electron-mobility transistor (HEMT) exhibits a small-signal gain of 3.6 dB and an output power of 3.4 mW with 2 dB gain.

Details

ISSN :
00135194
Volume :
22
Database :
OpenAIRE
Journal :
Electronics Letters
Accession number :
edsair.doi...........57a422036c8d9e5d256eca5296c3e65b
Full Text :
https://doi.org/10.1049/el:19860535