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Interface dipole and band bending in the hybrid p−n heterojunction MoS2/GaN(0001)

Authors :
Carl H. Naylor
Hugo Henck
Julien E. Rault
Mathieu G. Silly
Fabrice Oehler
Julien Brault
A. T. Charlie Johnson
Patrick Le Fèvre
François Bertran
Stéphane Berciaud
Olivia Zill
Stéphane Collin
Abdelkarim Ouerghi
Noelle Gogneau
Fausto Sirotti
Zeineb Ben Aziza
Debora Pierucci
Emmanuel Lhuillier
Source :
Physical Review B. 96
Publication Year :
2017
Publisher :
American Physical Society (APS), 2017.

Abstract

Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n-doped MoS2 flakes transferred on p-doped GaN(0001) layers. Based on angle-resolved photoemission spectroscopy (ARPES) and high resolution x-ray photoemission spectroscopy (HR-XPS), we investigate the electronic structure modification induced by the interlayer interactions in MoS2/GaN heterostructure. In particular, a shift of the valence band with respect to the Fermi level for MoS2/GaN heterostructure is observed, which is the signature of a charge transfer from the 2D monolayer MoS2 to GaN. The ARPES and HR-XPS revealed an interface dipole associated with local charge transfer from the GaN layer to the MoS2 monolayer. Valence and conduction band offsets between MoS2 and GaN are determined to be 0.77 and −0.51eV, respectively. Based on the measured work functions and band bendings, we establish the formation of an interface dipole between GaN and MoS2 of 0.2 eV.

Details

ISSN :
24699969 and 24699950
Volume :
96
Database :
OpenAIRE
Journal :
Physical Review B
Accession number :
edsair.doi...........5779566d16bf4711435067d078c03aeb
Full Text :
https://doi.org/10.1103/physrevb.96.115312