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Low temperature method to passivate oxygen vacancies in un-doped ZnO films using atomic layer deposition
- Source :
- Thin Solid Films. 660:852-858
- Publication Year :
- 2018
- Publisher :
- Elsevier BV, 2018.
-
Abstract
- Owing to oxygen vacancies, the as-prepared ZnO normally shows n-type semiconducting characteristic. This has restricted the preparation of high-quality p-type ZnO and the application of ZnO optoelectronic devices. Therefore, we studied a method of using H2O2 as an oxygen source to passivate oxygen vacancies (Vo) in ZnO films via atomic layer deposition (ALD). The temperature range for the self-limited growth of crystalline ZnO thin films by ALD using diethylzinc and H2O2 was found to be in the range of 80 to 150 °C. Our results show that the use of H2O2 as an oxygen source can provide an O-rich condition (instead of H2O) for the growth of ZnO film, with a total preferential (002) orientation of the growth plane and decreased grain size. Further, the O-rich growth environment can suppress the formation of Vo and zinc interstitials and decrease the carrier concentration in ZnO (from 2.525 × 1019 cm−3 to 1.695 × 1012 cm−3). This can lead to an increase in the film resistivity from 1.717 × 10−2 Ω·cm for a ZnO film prepared using H2O to 1.348 × 104 Ω·cm for a ZnO film prepared using H2O2. Thus, H2O2 could be used to passivate Vo in ZnO at a low temperature, and it could be beneficial for the preparation of p-type ZnO films.
- Subjects :
- 010302 applied physics
Materials science
Passivation
Doping
Metals and Alloys
chemistry.chemical_element
02 engineering and technology
Surfaces and Interfaces
Atmospheric temperature range
021001 nanoscience & nanotechnology
01 natural sciences
Oxygen
Grain size
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Atomic layer deposition
Chemical engineering
chemistry
Electrical resistivity and conductivity
0103 physical sciences
Materials Chemistry
Thin film
0210 nano-technology
Subjects
Details
- ISSN :
- 00406090
- Volume :
- 660
- Database :
- OpenAIRE
- Journal :
- Thin Solid Films
- Accession number :
- edsair.doi...........5760b47ea7b4505a4a5e8e8f6d37e190