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Monolithic GaAlAs/GaAs infrared-to-visible wavelength converter with optical power amplification

Authors :
M.N. Svilans
H. Beneking
Norbert Grote
Source :
IEEE Transactions on Electron Devices. 28:404-407
Publication Year :
1981
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 1981.

Abstract

A monolithic wavelength converter has been constructed in the GaAlAs alloy system which comprises a wide gap emitter phototransistor and a double heterojunction (DH) light emitting diode (LED) in a bifacial configuration. The liquid phase epitaxy (LPE)-grown structure is capable of efficiently converting IR light with λ < 870 nm into the red spectral range in conjunction with optical power amplification.

Details

ISSN :
00189383
Volume :
28
Database :
OpenAIRE
Journal :
IEEE Transactions on Electron Devices
Accession number :
edsair.doi...........5724b6df01a37687d3f533a7f4c27b77
Full Text :
https://doi.org/10.1109/t-ed.1981.20354