Demonstration of recessed SiGe S/D and inserted metal gate on HfO/sub 2/ for high performance pFETs

This paper demonstrates for the first time the integration of an HfO2/TiN/poly gate stack and a recessed SiGe S/D module. It also shows that by combining the SiGe stressor with a compressive nitride contact etch stop layer, it is possible to reach improvements in IDSAT of up to 65%, showing that the various strain mechanisms are additive on advanced gate stacks. This way an IDSAT of 422 muA/mum at 20pA/mum I OFF and VDD = 1.1 V can be obtained when a 25% SiGe S/D module is combined with a 1.5 GPa compressive sCESL layer