Demonstration of narrow switching distributions in STTMRAM arrays for LLC applications at 1x nm node

We demonstrate spin-transfer torque magnetoresistive random access memory (STT-MRAM) arrays achieving 2.8e-10 write error rate (WER) performance at 3 ns write duration at a magnetic tunnel junction (MTJ) diameter of 40 nm. The bit-to-bit distribution of the write voltage at a WER of 1e-6 is characterized by a relative standard deviation of 3.7% for W0 and 4.5% for W1, sufficient to meet the write voltage distribution requirement for last-level cache (LLC) applications at 1x nm nodes.