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Phosphorus Doping of 4H-SiC by KrF Excimer Laser Irradiation in Phosphoric Solution

Authors :
Tanemasa Asano
Koji Nishi
Akihiro Ikeda
Hiroshi Ikenoue
Source :
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Publication Year :
2012
Publisher :
The Japan Society of Applied Physics, 2012.

Subjects

Subjects :
Materials science
Organic chemistry
Excimer laser irradiation
Photochemistry
Phosphorus doping

Details

Database :
OpenAIRE
Journal :
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials
Accession number :
edsair.doi...........56a8a32faf87a89d6698c09bea3a2091
Full Text :
https://doi.org/10.7567/ssdm.2012.l-2-5
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