Strain mapping at the interface of InP/In x Ga1-x As/InP as measured by the scanning transmission electron microscope-moiré fringe method

MLA

Yoshifumi Oshima, et al. “Strain Mapping at the Interface of InP/In x Ga1-x As/InP as Measured by the Scanning Transmission Electron Microscope-Moiré Fringe Method.” Applied Physics Express, vol. 12, Oct. 2019, p. 105504. EBSCOhost, https://doi.org/10.7567/1882-0786/ab4604.

APA

Yoshifumi Oshima, Tongmin Chen, & Masashi Akabori. (2019). Strain mapping at the interface of InP/In x Ga1-x As/InP as measured by the scanning transmission electron microscope-moiré fringe method. Applied Physics Express, 12, 105504. https://doi.org/10.7567/1882-0786/ab4604

Chicago

Yoshifumi Oshima, Tongmin Chen, and Masashi Akabori. 2019. “Strain Mapping at the Interface of InP/In x Ga1-x As/InP as Measured by the Scanning Transmission Electron Microscope-Moiré Fringe Method.” Applied Physics Express 12 (October): 105504. doi:10.7567/1882-0786/ab4604.