1600V 4H-SiC UMOSFETs with Dual Buffer Layers

Authors :: C. Bui
M. Gomez
Qingchun Zhang
Ehab Y. Hanna
Source :: Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..
Publication Year :: 2005
Publisher :: IEEE, 2005.
Abstract: This paper presents the design and fabrication of 1600V 4H-SiC UMOSFETs with a novel dual buffer layer structure, which shortens the trench etching time by 2/spl times/ and achieves a high channel periphery density of 3330cm/cm/sup 2/ for low specific on-resistance. The device exhibits 50m/spl Omega/-cm/sup 2/ of specific on-resistance with /spl sim/1/spl mu/m of channel length, and could be further reduced with

Subjects :: Fabrication
Materials science
business.industry
Etching (microfabrication)
Trench
Electrical engineering
Optoelectronics
Power MOSFET
business
Omega
Buffer (optical fiber)

Database :: OpenAIRE
Journal :: Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.
Accession number :: edsair.doi...........562625f74fc499922d9daf7e606f1ee9
Full Text :: https://doi.org/10.1109/ispsd.2005.1487988