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Texture formation in epitaxial hard magnetic Sm2 Co7 thin films
- Source :
- physica status solidi (a). 207:106-116
- Publication Year :
- 2009
- Publisher :
- Wiley, 2009.
-
Abstract
- The crystallographic and magnetic texture of epitaxial, hard magnetic Sm 2 Co 7 films prepared on Cr-buffered MgO single-crystal substrates are analyzed. Substrate symmetry, deposition temperature, and deposition rate are systematically varied, resulting in a variety of different, but epitaxial orientations. On Cr-buffered MgO(001), Sm 2 Co 7 grows with three different types of orientations: one inplane orientation with the c-axis aligned in the substrate plane parallel to MgO[100] and [010], and two tilted orientations, where the c-axes of the Sm 2 Co 7 crystals have a 45° and 60° orientation to the substrate plane. The volume fraction of the tilted orientations decreases with decrease in the Sm 2 Co 7 deposition temperature. A lower limit is given by the epitaxial growth temperature, which is necessary to form a fully crystalline, epitaxial film. This temperature can be reduced by lowering the deposition rate. Thus, almost completely inplane aligned films can be achieved by a low-rate/low-temperature deposition. On a Cr-buffered MgO(01 1) substrate Sm 2 Co 7 grows with a single orientation, i.e., with the c-axis aligned onto the substrate plane parallel to MgO[100]. The findings are discussed considering elastic strain minimization, thermodynamics and kinetics of film growth, surface faceting, and Co-particle formation.
- Subjects :
- Materials science
Condensed matter physics
Surfaces and Interfaces
Substrate (electronics)
Condensed Matter Physics
Epitaxy
Magnetic hysteresis
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Faceting
Crystallography
Vacuum deposition
Materials Chemistry
Deposition (phase transition)
Texture (crystalline)
Electrical and Electronic Engineering
Thin film
Subjects
Details
- ISSN :
- 18626300
- Volume :
- 207
- Database :
- OpenAIRE
- Journal :
- physica status solidi (a)
- Accession number :
- edsair.doi...........560df61fa6d6da4306eb8f6efb3f260e