Performance Analysis of Gate-Stack Dual-Material DG MOSFET Using Work-Function Modulation Technique for Lower Technology Nodes

Short channel effects (SCEs) along with mobility degradation has a great impact on CMOS technology below 100 nm. These effects can be overcome by using gate and channel engineering techniques which will improve mobility of the charge carriers, thus eventually improving drain current and trans-conductance of the device. In this work, the speed of operation for DG MOSFET is improved by reducing the channel length where dual-material gate-stack is deployed to avoid the drain-induced barrier lowering (DIBL) and hot carrier effects. In the presented device, the metal closer to the source and drain has higher and lower work function, respectively which causes a significant decrement in the peak electric field at the drain side and so the SCEs. The carrier mobility is also increased due to enhanced electric field in the channel, near the source, caused by higher work function gate material which, in turn, increases the MOSFET’s driving current. The screening effect reducing SCEs and an increment in the acceleration of the charge carriers in the channel are mainly attributed due to higher and lower threshold voltage found near the source and drain, respectively.