The photoresist developing ability study at different contact angle and mask transmission rate

Authors :: Zheng Haichang
Chen Jiawen
Qin Lipeng
Yin Pengteng
Chen Lijun
Wang Xiaolong
Source :: 2021 China Semiconductor Technology International Conference (CSTIC).
Publication Year :: 2021
Publisher :: IEEE, 2021.
Abstract: The PFOA surfactant (chemical structure: (polymer backbone)-C8F17) using in photoresist is forbade own to every country need protect environment, so the PFOA surfactant is replaced by non PFOA type (chemical structure: (polymer)-(CF2) n2 -CF3, n2

Subjects :: chemistry.chemical_classification
Contact angle
Materials science
Pulmonary surfactant
Resist
chemistry
Wafer
Polymer
Edge (geometry)
Photoresist
Composite material
Layer (electronics)

Database :: OpenAIRE
Journal :: 2021 China Semiconductor Technology International Conference (CSTIC)
Accession number :: edsair.doi...........55ed7849befcce9301189ad5df0aa0c5

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