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Influence of the Diamond Layer on the Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors
- Source :
- Chinese Physics Letters. 34:027301
- Publication Year :
- 2017
- Publisher :
- IOP Publishing, 2017.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Transistor
General Physics and Astronomy
Diamond
Algan gan
02 engineering and technology
engineering.material
021001 nanoscience & nanotechnology
01 natural sciences
law.invention
law
0103 physical sciences
engineering
Optoelectronics
0210 nano-technology
business
High electron
Layer (electronics)
Subjects
Details
- ISSN :
- 17413540 and 0256307X
- Volume :
- 34
- Database :
- OpenAIRE
- Journal :
- Chinese Physics Letters
- Accession number :
- edsair.doi...........55a22bfd538433ff9daa4875463fbaf5