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VIB-6 measurement of minority-carrier transport parameters in heavily doped n-type silicon
- Source :
- IEEE Transactions on Electron Devices. 32:2555-2555
- Publication Year :
- 1985
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1985.
Details
- ISSN :
- 00189383
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........559b07efcf6b0cc4583263862be7837e
- Full Text :
- https://doi.org/10.1109/t-ed.1985.22380