Short-Circuit Failure Model of SiC MOSFET Including the Interface Trapped Charges

MLA

Shilu Mu, et al. “Short-Circuit Failure Model of SiC MOSFET Including the Interface Trapped Charges.” IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 8, Mar. 2020, pp. 90–98. EBSCOhost, https://doi.org/10.1109/jestpe.2019.2939877.

APA

Shilu Mu, Bing Wang, Yuming Zhou, Zhaoquan Chen, & Hangzhi Liu. (2020). Short-Circuit Failure Model of SiC MOSFET Including the Interface Trapped Charges. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8, 90–98. https://doi.org/10.1109/jestpe.2019.2939877

Chicago

Shilu Mu, Bing Wang, Yuming Zhou, Zhaoquan Chen, and Hangzhi Liu. 2020. “Short-Circuit Failure Model of SiC MOSFET Including the Interface Trapped Charges.” IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (March): 90–98. doi:10.1109/jestpe.2019.2939877.