Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator

Authors :: Pei-Wen Li
S. W. Lin
Pang-Shiu Chen
Ming-Jinn Tsai
W. M. Liao
S. C. Lu
Source :: Applied Physics Letters. 83:4628-4630
Publication Year :: 2003
Publisher :: AIP Publishing, 2003.
Abstract: A complementary metal-oxide-semiconductor-compatible method is proposed to form atomic-scale germanium (Ge) quantum dots (

Subjects :: Thermal oxidation
Materials science
Physics and Astronomy (miscellaneous)
Condensed matter physics
business.industry
Economies of agglomeration
chemistry.chemical_element
Silicon on insulator
Germanium
Insulator (electricity)
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Atomic units
Condensed Matter::Materials Science
chemistry
Semiconductor quantum dots
Quantum dot
Optoelectronics
business

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