Room temperature electroluminescence of nanofabricated Si–Si1−xGexquantum dot diodes

The fabrication and room temperature light emission of a series of 50 nm Si–SiGe quantum dot diodes emitting light at about 1.3 μm are reported. These diodes are made from molecular beam epitaxially (MBE) grown p – i – n structures with the active region being either a superlattice or a single heterolayer. It was found that the electrical-to-optical power conversion efficiency of the diodes was 0.14%. Possible light emission mechanisms and technological aspects of the work are discussed.