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Chemical modification and patterning of self assembled monolayers using scanning electron and ion-beam lithography
- Source :
- Microelectronic Engineering. 88:1948-1950
- Publication Year :
- 2011
- Publisher :
- Elsevier BV, 2011.
-
Abstract
- We present chemical modification of self assembled monolayers (SAMs) using electron and ion-beam lithographies. We used thiolated polyethylene oxide (PEO) SAMs on gold to fabricate chemically contrasting patterns at the nanoscale. Patterned surfaces were characterized by X-ray photoelectron spectroscopy (XPS), time of flight-secondary ion mass spectrometry (ToF-SIMS). Results showed a chemical modification of surfaces patterned by means of electron beam (e-beam) lithography and a removal of PEO SAMs on the areas treated with the ion beam. The chemical modification of PEO SAMs converted the non-fouling surfaces on fouling surfaces.
- Subjects :
- Materials science
Ion beam
Scanning electron microscope
technology, industry, and agriculture
Chemical modification
Nanotechnology
Self-assembled monolayer
Condensed Matter Physics
Ion beam lithography
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
X-ray photoelectron spectroscopy
Electrical and Electronic Engineering
Lithography
Electron-beam lithography
Subjects
Details
- ISSN :
- 01679317
- Volume :
- 88
- Database :
- OpenAIRE
- Journal :
- Microelectronic Engineering
- Accession number :
- edsair.doi...........552ce66b39226a847dab143a38a06b68
- Full Text :
- https://doi.org/10.1016/j.mee.2010.12.104