Effect of surface treatment on electrical properties of AlGaAs/GaAs heterojunction bipolar transistor

This paper presents the effect of surface treatment on the electrical properties of an AlGaAs/GaAs heterojunction bipolar transistor (HBT). The extrinsic base surface of the HBT was treated in sequence with a (NH 4 ) 2 S x :H 2 O = 1:1 solution, H 2 plasma, and NH 3 plasma. The treated HBT had a lower surface recombination current, base resistance, and low-frequency base current noise than the untreated HBT. These values decreased by 32%, 42%, and ∼3 dB, respectively. Because of the reduced base resistance, the maximum frequency of oscillation f max , which was 40.3 GHz without surface treatment, improved to 57.8 GHz.