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Is there a Zero Temperature bias point (ZTC) on Back Enhanced (BE) SOI MOSFET?
- Source :
- 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
- Publication Year :
- 2017
- Publisher :
- IEEE, 2017.
-
Abstract
- This paper reports the temperature influence on the Back Enhanced (BE) SOI MOSFET fabricated with two different source/drain contact electrodes: Ohmic and Schottky. The BE SOI MOSFET (Patent BR 102015020974-6, 2015) is a kind of undoped junction-less SOI transistor, which works like an n-type or p-type MOS, depending on the back bias conditions. In spite of the Schottky contact at source/drain is mandatory in order to have both type of transistor working in a similar way, the use of Ohmic contact may present some specials advantages. The results showed the presence of a ZTC (Zero Temperature Coefficient) bias condition only in the device with Ohmic source/drain contact. It was observed that the Schottky contact resistance decreased when the temperature increases resulting in a higher current and consequently the absence of the ZTC. This effect is explained through experimental measurements and simulation.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Schottky barrier
Transistor
Silicon on insulator
Schottky diode
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
law.invention
law
0103 physical sciences
Electrode
MOSFET
Optoelectronics
Point (geometry)
0210 nano-technology
business
Ohmic contact
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
- Accession number :
- edsair.doi...........548b9a4cace8605020cfc519f297e63e