Design Optimization and Analysis of InGaAs-Based Junctionless Fin Type Field-Effect Transistors (FinFETs) with LG = 10 nm

Subjects

Subjects :

Materials science
business.industry
Biomedical Engineering
Optoelectronics
General Materials Science
Bioengineering
Field-effect transistor
General Chemistry
Condensed Matter Physics
business
Fin (extended surface)

Details

ISSN :

15334899 and 15334880

Volume :

16

Database :

OpenAIRE

Journal :

Journal of Nanoscience and Nanotechnology

Accession number :

edsair.doi...........5464b847ee54148921da837721ea86d3