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Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Si-Doped GaN
- Source :
- ACS Applied Electronic Materials. 3:4618-4622
- Publication Year :
- 2021
- Publisher :
- American Chemical Society (ACS), 2021.
-
Abstract
- The atomic structures and the electronic states of active and inactive dopant sites in semiconductor are elucidated successfully by using X-ray absorption near-edge structure (XANES), Auger electro...
Details
- ISSN :
- 26376113
- Volume :
- 3
- Database :
- OpenAIRE
- Journal :
- ACS Applied Electronic Materials
- Accession number :
- edsair.doi...........542618714da82da146ac7b7c04ded3cc
- Full Text :
- https://doi.org/10.1021/acsaelm.1c00766