Step-Coverage Characteristics of Silicon-Dioxide Films Formed by a New Low-Temperature Chemical-Vapor-Deposition Method

Step-coverage characteristics have been investigated for hydrogen-free SiO2 films deposited by a newly-developed low-temperature chemical-vapor-deposition (CVD) method using a gas mixture of tetra-iso-cyanate-silane and tertiary-methyl-amine. The effective diffusion length of CVD source molecules estimated from open-cavity experiments was around 300 µm. Scanning electron microscopy (SEM) observation showed that the film filled a 1-µm-wide and 2.7-µm-deep trench with excellent conformity.