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Prebake and post-exposure bake effects on the dissolution of AZ-PF

Authors :
Leonidas E. Ocola
Azalia A. Krasnoperova
Michael T. Reilly
Franco Cerrina
S. Turner
Source :
Advances in Resist Technology and Processing X.
Publication Year :
1993
Publisher :
SPIE, 1993.

Abstract

We have performed experiments to study the kinetics of dissolution of the positive chemically amplified resist AZ-PF (Hoechst AG). The resist dissolution in exposed regions was shown to have non-linear time dependence, with a delay time strongly dependent on prebake and post- exposure bake conditions. Effect of the presence of a low-solubility surface layer on patterning of submicron features as well as on roughness of the developed film has been demonstrated.

Details

ISSN :
0277786X
Database :
OpenAIRE
Journal :
Advances in Resist Technology and Processing X
Accession number :
edsair.doi...........53e21f4bcb0dc9803ff6a15be100c4af