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Investigation of silicon oxide films prepared by room-temperature ion plating
- Source :
- Journal of Applied Physics. 83:1107-1113
- Publication Year :
- 1998
- Publisher :
- AIP Publishing, 1998.
-
Abstract
- To develop excellent silicon oxide film using low temperature method, ion plating (IP) oxide is investigated. Physicochemical characterizations of the IP oxide are studied using ellipsometry, Fourier transform infrared spectrometry, and P-etch rate measurement. The IP oxide is a high-density dielectric with strained bonds. Electrical characterizations are also analyzed using capacitance–voltage and current–voltage techniques through metal-oxide-semiconductor capacitors. The IP oxide has a low leakage current, a high breakdown field, and low interface state density. In addition, IP oxide annealed in N2 ambient is also studied. After high-temperature annealing, the characteristics of IP oxide become comparable to those of thermal oxide. The novel oxide film is successfully applied as a gate insulator to low-temperature processed (⩽620 °C) polysilicon thin-film transistors.
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 83
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........53d52eabd57ab9c996d17f9d7fa4b4a4