Fully depleted SOI- and sSOI-MOSFETs with GdScO3 as gate dielectric

Long channel n-MOSFETs on thin SOI and sSOI substrates have been prepared integrating gadolinium scandate as high-kappa gate dielectric in a gate last process. The GdScCh films were deposited by electron beam evaporation and subsequently annealed in oxygen atmosphere. Electrical characterization of readily processed devices reveal well behaved output and transfer characteristics with high Ion/Ioff ratios of 106-108 and steep inverse subthreshold slopes of