Back to Search Start Over

A synaptic device based on the optoelectronic properties of ZnO thin film transistors

Authors :
José Henrique Ferreira Nobre
Amer Samir Safade
Alexandre Urbano
Edson Laureto
Source :
Applied Physics A. 129
Publication Year :
2023
Publisher :
Springer Science and Business Media LLC, 2023.

Details

ISSN :
14320630 and 09478396
Volume :
129
Database :
OpenAIRE
Journal :
Applied Physics A
Accession number :
edsair.doi...........532b5ce9a5ad40b9e3beaa6b8606b808
Full Text :
https://doi.org/10.1007/s00339-023-06490-8