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An Ni/Ga-Doped ZnO Layer as a Transparent p-Type Ohmic Contact for GaN-Based Light-Emitting Diodes
- Source :
- Journal of Nanoelectronics and Optoelectronics. 10:273-276
- Publication Year :
- 2015
- Publisher :
- American Scientific Publishers, 2015.
- Subjects :
- Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 15551318 and 1555130X
- Volume :
- 10
- Database :
- OpenAIRE
- Journal :
- Journal of Nanoelectronics and Optoelectronics
- Accession number :
- edsair.doi...........529c50757f57b88b4fff2f8794f40848
- Full Text :
- https://doi.org/10.1166/jno.2015.1745