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A theoretical survey of unsaturated or multiply bonded and divalent silicon compounds. Comparison with carbon analogs

Authors :
John A. Pople
M. Karni
Paul von Ragué Schleyer
M.-B. Krogh-Jespersen
Yitzhak Apeloig
Brian T. Luke
Jayaraman Chandrasekhar
Source :
Journal of the American Chemical Society. 108:270-284
Publication Year :
1986
Publisher :
American Chemical Society (ACS), 1986.

Abstract

Multiply bonded Si molecules, H2SiX (X = Be, BH, CH2, SiH2, NH, 0), HSiY (Y = B, CH, SiH, N), and SiZ (Z = 0, 02), along with their carbon analogues, have been investigated by ab initio methods. All structural parameters were optimized by use of the 3-21G basis set and the higher 3-21G(*) basis set for silicon. In addition, the isomeric substituted silylenes which result from 1,2-hydrogen shifts were also considered. In many cases, the substituted silylene structures were energetically favored. The effect of all first-row substituents on the singlet-triplet energy separation of divalent silicon molecules was assessed and compared with the corresponding carbenes.

Details

ISSN :
15205126 and 00027863
Volume :
108
Database :
OpenAIRE
Journal :
Journal of the American Chemical Society
Accession number :
edsair.doi...........528b0fc6d729938363d09aeaa81dfb24