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Probability approach for investigation of MOST threshold voltage dependence on gate electrode length
- Source :
- Microelectronics Reliability. 30:51-53
- Publication Year :
- 1990
- Publisher :
- Elsevier BV, 1990.
-
Abstract
- The apparent expression of MOST threshold voltage distribution with arbitrary mask-level gate length is obtained. It is shown that calculated and experimental distributions are in good agreement in the case of a short channel device.
- Subjects :
- Materials science
business.industry
Reverse short-channel effect
Electrical engineering
Gate length
Drain-induced barrier lowering
Overdrive voltage
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Threshold voltage
Distribution (mathematics)
Electrode
Hardware_INTEGRATEDCIRCUITS
Electrical and Electronic Engineering
Atomic physics
Safety, Risk, Reliability and Quality
business
Communication channel
Subjects
Details
- ISSN :
- 00262714
- Volume :
- 30
- Database :
- OpenAIRE
- Journal :
- Microelectronics Reliability
- Accession number :
- edsair.doi...........51cca5688753b77cbef8be865a8e56da