Effect of Ionizing Radiation and Temperature on SiGe HBT

Authors :: Santosh Kumar Gupta
Yogesh Kumar Verma
Prateek Kishor Verma
Varun Mishra
R. K. Chauhan
Source :: 2018 5th IEEE Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON).
Publication Year :: 2018
Publisher :: IEEE, 2018.
Abstract: In this brief, a thorough investigation is performed to analyze the effect of ionizing radiation and temperature on SiGe HBT. The effect of 1 Mrad (Si) gamma total dose is analyzed on device performance parameters: base transit time, cut-off frequency, and maximum oscillation frequency. Also, the effects of both intrinsic and extrinsic reliability issues i.e., radiation rich environment, temperature, and self heating are analyzed on SiGe HBT and SiGe BiCMOS HBT using TCAD.

Subjects :: Materials science
Silicon
business.industry
Oscillation
Heterojunction bipolar transistor
chemistry.chemical_element
BiCMOS
Radiation
Silicon-germanium
Ionizing radiation
chemistry.chemical_compound
Reliability (semiconductor)
chemistry
Optoelectronics
business

Database :: OpenAIRE
Journal :: 2018 5th IEEE Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON)
Accession number :: edsair.doi...........51ac9e041ad20efeafce2a1971f01782

Tools