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Prediction of Defects Occurrence Time for Capacitive Device

Authors :
Hao-ran Xiang
Yi Ma
Zezhong Zheng
Shao-bing Jiang
Jiang Li
Fangrong Zhou
Jing Peng
Source :
2019 16th International Computer Conference on Wavelet Active Media Technology and Information Processing.
Publication Year :
2019
Publisher :
IEEE, 2019.

Abstract

In this paper, we propose an analysis method for defect data of capacitive devices and a method for predicting the occurrence time of defects based on the analysis method. This method is not sensitive to noise in data and has strong robustness. We analyze various features that may affect the occurrence time of capacitive device defects, and use sparse auto encoder (SAE) for dimensionality reduction and denoising. This unsupervised method learns the lowdimensional sparse features of nonlinear manifolds from the data features, which improves the generalization performance of the classifiers to a certain extent. Based on K-nearest regression (KNR), support vector regression (SVR), random forest (RF), gradient boosting decision tree (GBDT) and deep learning (DL) models, we predict the occurrence time of capacitive equipment defects respectively. The root means square error (RMSE) between prediction time and labels is only 243.80 days. Compared with the simple baseline model, the error is reduced by 1773.50 days, and the predicted result is state-of-the-art.

Details

Database :
OpenAIRE
Journal :
2019 16th International Computer Conference on Wavelet Active Media Technology and Information Processing
Accession number :
edsair.doi...........5160b61eb9d194a717b3af9eb38b329a
Full Text :
https://doi.org/10.1109/iccwamtip47768.2019.9067704