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Material Design of In3SbTe2 for Fast Switching Phase Change Memory

Authors :
Y.T. Kim
Y.M. Jhon
S. Kwon
J. Ahn
Source :
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Publication Year :
2018
Publisher :
The Japan Society of Applied Physics, 2018.

Subjects

Subjects :
Phase-change memory
Materials science
Electronic engineering
Material Design
Fast switching

Details

Database :
OpenAIRE
Journal :
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials
Accession number :
edsair.doi...........5101e20096087076c4b5af22b71829c7
Full Text :
https://doi.org/10.7567/ssdm.2018.ps-2-06
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