Electrical Characterization of p-type 3C-SiC Epilayers Grown on n-type 6H-SiC by means of Sublimation Epitaxy

Authors :: A. Tsirimpis
M. Krieger
G. Pensl
M. Beshkova
M. Syväjärvi
R. Yakimova
Gabriel Ferro
Paul Siffert
Source :: AIP Conference Proceedings.
Publication Year :: 2010
Publisher :: AIP, 2010.
Abstract: Epitaxial p‐type 3C‐SiC layers have been grown on 6H‐SiC substrates by means of the sublimation epitaxy method. The growth process was conducted at a source temperature of 2000° C under vacuum conditions (

Subjects :: Materials science
Deep-level transient spectroscopy
chemistry
Doping
Analytical chemistry
chemistry.chemical_element
Schottky diode
Sublimation (phase transition)
Crystallite
Boron
Epitaxy
Spectral line

Full Text Access

Tools