Free ion yields for tetramethylsilane and tetramethylgermanium

Authors :: K. Neichi
Kazuo Hasegawa
K. Masuda
H. Yuta
Ryusaburo Kikuchi
K. Suzuki
Masato Higuchi
Y. Hoshi
H. Iso
M. Sakamoto
Koji Abe
N. Kawamura
Kazumasa Miyano
F. Suekane
K. Oyama
Source :: IEEE Conference on Nuclear Science Symposium and Medical Imaging.
Publication Year :: 2003
Publisher :: IEEE, 2003.
Abstract: The free ion yields from /sup 207/Bi conversion electrons were measured as a function of applied electric field using ionization chambers filled with tetramethylsilane (TMS) and tetramethylgermanium (TMG). The distributions for thermalization lengths of electrons were calculated by using Gaussian and exponential forms. The total free ion yields considering the impurity effect in liquid, and the thermalization lengths of electrons in TMS and TMG were determined to be 3.35+or-0.49, 3.42+or-0.56 and 165+or-18 AA, 185+or-24 AA, respectively. >