High Aspect Ratio CPW Fabricated Using a Micromachining Process Combining DRIE, Thermal Oxidation, Electroplating, and Planarization

MLA

Xiaojun T. Huang, et al. “High Aspect Ratio CPW Fabricated Using a Micromachining Process Combining DRIE, Thermal Oxidation, Electroplating, and Planarization.” 2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium, Oct. 2009. EBSCOhost, https://doi.org/10.1109/csics.2009.5315761.

APA

Xiaojun T. Huang, Noel C. MacDonald, Shane T. Todd, & John E. Bowers. (2009). High Aspect Ratio CPW Fabricated Using a Micromachining Process Combining DRIE, Thermal Oxidation, Electroplating, and Planarization. 2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium. https://doi.org/10.1109/csics.2009.5315761

Chicago

Xiaojun T. Huang, Noel C. MacDonald, Shane T. Todd, and John E. Bowers. 2009. “High Aspect Ratio CPW Fabricated Using a Micromachining Process Combining DRIE, Thermal Oxidation, Electroplating, and Planarization.” 2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium, October. doi:10.1109/csics.2009.5315761.